symbol v ds v gs i dm t j , t stg symbol ty p max 300 360 340 425 r jl 280 320 junction and storage temperature range a p d c 0.35 0.22 -55 to 150 t a =70c i d 1.6 1.3 10 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 12 gate-source voltage drain-source voltage 30 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja AO7410 n-channel enhancement mode field effect transistor features v ds (v) = 30v i d = 1.6 a (v gs = 10v) r ds(on) < 90m ? (v gs = 10v) r ds(on) < 100m ? (v gs = 4.5v) r ds(on) < 175m ? (v gs = 2.5v) general description the AO7410 uses advanced trench technology to provide excellent r ds(on) , very low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a load switch or in pwm applications. standard product AO7410 is pb-free (meets rohs & sony 259 specifications). AO7410l is a green product ordering option. AO7410 and a o7410l are electrically identical. g d s s g d sc-70 (sot-323) top view alpha & omega semiconductor, ltd.
AO7410 symbol min typ max units bv dss 30 v 0.001 1 t j =55c 5 i gss 100 na v gs(th) 1 1.4 1.8 v i d(on) 10 a 75 90 t j =125c 105 130 82 100 m ? 120 175 m ? g fs 4.5 s v sd 0.84 1 v i s 2.5 a c iss 226 270 pf c oss 39 pf c rss 29 pf r g 1.4 1.7 ? q g 3 3.6 nc q gs 0.4 nc q gd 1.2 nc t d(on) 2.8 4 ns t r 2.1 3 ns t d(off) 17.4 21 ns t f 2.1 3 ns t rr 9.1 11 ns q rr 3.4 4 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters i f =1.6a, di/dt=100a/ s v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge v gs =4.5v, v ds =15v, i d =1.6a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =9.4 ? , r gen =6 ? m ? v gs =4.5v, i d =1.5a i s =1a,v gs =0v v ds =5v, i d =3.8a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs =12v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =1.6a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =2.5v, i d =1a v gs =4.5v, v ds =5v v gs =10v, i d =1.6a reverse transfer capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev1: august 2005 alpha & omega semiconductor, ltd.
AO7410 typical electrical and thermal characteristics 270 1.7 3 3.6 0.4 1.2 2.8 2.1 3 17.4 21 2.1 9.1 11 3.4 4 0 3 6 9 12 15 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2.5v 3v 3.5v 4v 10v 6v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 v gs (volts) figure 2: transfer characteristics i d (a) 50 100 150 200 250 0246810 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =2.5v i d =1a v gs =10v i d =1.6a v gs =4.5v i d =1.5a 60 80 100 120 140 160 180 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v v gs =10v i d =1.6a 25c 125c alpha & omega semiconductor, ltd.
AO7410 typical electrical and thermal characteristics 270 1.7 3.6 13 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 50 100 150 200 250 300 350 400 0 5 10 15 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 5 10 15 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =1.6a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =360c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 alpha & omega semiconductor, ltd.
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